| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device such that an upper-layer wire formed in the same layer with a bonding pad is made fine, by preventing an inter-layer insulating film formed below the bonding pad from cracking, and a manufacturing method thereof. <P>SOLUTION: A first metal film 20 is formed on the inter-layer insulating film 17. The first metal film 20 is anisotropically etched using first resist as a mask. On the inter-layer insulating film 17, a second metal film 24 having a lower Young's modulus than that of the first metal layer 20 is formed covering the remaining first metal film 20. A second resist is formed on the second metal film 24, in a region where the first metal film 20 is present on the inter-layer insulating film 17 and in a portion of a region where the first metal film 20 does not exist. The second metal film 24 is etched anisotropically, by using the second resist 33 as a mask to form the bonding pad having the first metal film 20 and second metal film 24, and the upper-layer wire 22 which has the second metal film 24 but does not have the first metal film 20. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
