| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can be made compact, and the semiconductor device. <P>SOLUTION: In the manufacturing method of the semiconductor device 1 according to the present invention, a wiring board 3 and three semiconductor chip 4 are stacked first so that a connection electrode 7 and a connection terminal 8 may be exposed. The connection electrode 7 and the connection terminal 8 are arranged on a straight line. Then, a thin film wiring 6 is linearly formed by sputtering. A mask (not shown) used for the sputtering has a stepped part or inclination part in a shape similar to that of a formation region (left linear stepped region) of the thin film wiring 6 formed with the wiring board 3 and three semiconductor chips 4 which are stacked shifting to the right, and also has a slit for thin film wiring formation at the stepped part or inclination part. <P>COPYRIGHT: (C)2009,JPO&INPIT |
