NONVOLATILE MEMORY DEVICES THAT INCLUDE A WRITE CIRCUIT THAT WRITES DATA OVER MULTIPLE WRITE PERIODS USING PULSES WHOSE PEAKS DO NOT COINCIDE WITH EACH OTHER

摘要

Nonvolatile memory devices include a plurality of nonvolatile memory cells and a write circuit that is operable to write data to the nonvolatile memory cells over a plurality of consecutive division write periods by generating a plurality of write pulses whose peaks do not coincide with one another to the nonvolatile memory cells.