| 摘要 |
#CMT# #/CMT# The method for fabricating an integrated circuit with a resistance change memory device, comprises forming a second conducting layer on or above a first conducting layer of a compound structure, which comprises a resistance change layer and a first conducting layer, which is intended on or above the resistance change layer, and structuring the second conducting layer in such a manner that a part of the structured second conducting layer is useful as via for contacting the first conducting layer. An insulating layer is intended on the structured second conducting layer. #CMT# : #/CMT# The method for fabricating an integrated circuit with a resistance change memory device, comprises forming a second conducting layer on or above a first conducting layer of a compound structure, which comprises a resistance change layer and a first conducting layer, which is intended on or above the resistance change layer, and structuring the second conducting layer in such a manner that a part of the structured second conducting layer is useful as via for contacting the first conducting layer. An insulating layer is intended on the structured second conducting layer, and the thickness of the insulating layer is reduced using a chemical-mechanical polishing process, until the vertical level of the top side of the second insulating layer is same or lower than the vertical level of the top sides of the structured second conducting layer. The compound structure is structured, after the second conducting layer is structured. The second conducting layer is separated using a physical vapor deposition-process at 300[deg] C. The structuring of the second conducting layer is implemented, in that a first mask layer is formed on the second conducting layer and is structured using a lithography process. The second conducting layer is structured, where the structured first mask layer acts as mask for structuring the second conducting layer. The structuring of the compound structure is carried out, in which a second mask layer is deposited on the compound structure and is structured using a lithography process. The compound structure is structured, where the structured second mask layer acts as mask for structuring the compound structure. The second mask layer consists of an insulating material. The second mask layer and the insulating layer are made of same material. The insulating layer is formed on the structured second mask layer. Independent claims are included for: (1) an integrated circuit with a memory device; (2) a cell with a compound structure and a conducting via; (3) a memory module; and (4) a computer system. #CMT#USE : #/CMT# Method for fabricating an integrated circuit with a resistance change memory device. #CMT#ADVANTAGE : #/CMT# The method is capable of fabricating an integrated circuit with increased reliability, increased quality and increased reproducibility using a resistance change memory device. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The diagram shows a flow diagram of a procedure for manufacturing a solid electrolyte memory device (Drawing includes non-English language text). #CMT#INORGANIC CHEMISTRY : #/CMT# Preferred Components: The second conducting layer consists of tungsten. The resistance change layer consists of chalcogenide. |
