发明名称 |
Halbleiterdünnschichtherstellungssystem |
摘要 |
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20') for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm -2 and can provide a silicon-insulating film interface exhibiting a low interface state density. |
申请公布号 |
DE60041166(D1) |
申请公布日期 |
2009.02.05 |
申请号 |
DE2000641166 |
申请日期 |
2000.07.08 |
申请人 |
NEC CORP.;SUMITOMO HEAVY INDUSTRIES LTD. |
发明人 |
TANABE, HIROSHI;AKASHI, TOMOYUKI;WATABE, YOSHIMI |
分类号 |
H01L21/20;H01L21/205;B23K26/06;B23K26/067;B23K26/073;C23C14/28;H01L21/027;H01L21/268;H01L21/336;H01L29/786;H01S3/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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