发明名称 SUBSTRATE SUPPORT MECHANISM, REDUCED-PRESSURE DRYING UNIT AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>A substrate support mechanism is provided to maintain constant temperature of the substrate to be processed while reducing interference form temperature around a support pin. A substrate support mechanism mounts the substrate to be processed and support it by the end of the support pin. The electricity support pin(128) is comprised of the whole of a hollow and the end of it is blocked. A ventilation opening(128c) is installed in the side wall of the electricity support pin. The inner temperature of the partition member is controlled by flowing a predetermined gas through a ventilation opening. For this, the gas supply part or the vacuum source is connected to the base end of the partition member.</p>
申请公布号 KR20090013732(A) 申请公布日期 2009.02.05
申请号 KR20080075660 申请日期 2008.08.01
申请人 TOKYO ELECTRON LIMITED 发明人 MASARU HONDA
分类号 H01L21/677;B65G49/06;C23C14/56;G02F1/13 主分类号 H01L21/677
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