发明名称 Plasma processing method
摘要 Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.
申请公布号 US2009035484(A1) 申请公布日期 2009.02.05
申请号 US20060794894 申请日期 2006.01.05
申请人 TOKYO ELECTRON LIMITED 发明人 KOBAYASHI TAKASHI;FURUI SHINGO;KITAGAWA JUNICHI
分类号 C23C16/513 主分类号 C23C16/513
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