发明名称 |
SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELECTRODE REGIONS |
摘要 |
A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure which includes a semiconductor substrate. The semiconductor substrate includes (i) a top substrate surface which defines a reference direction perpendicular to the top substrate surface and (ii) first and second semiconductor body regions. The method further includes forming (i) a gate divider region and (ii) a gate electrode layer on top of the semiconductor substrate. The gate divider region is in direct physical contact with gate electrode layer. A top surface of the gate electrode layer and a top surface of the gate divider region are essentially coplanar. The method further includes patterning the gate electrode layer resulting in a first gate electrode region and a second gate electrode region. The gate divider region does not overlap the first and second gate electrode regions in the reference direction.
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申请公布号 |
US2009032886(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070830090 |
申请日期 |
2007.07.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WONG ROBERT C.;YANG HAINING S. |
分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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