| 摘要 |
A semiconductor device P includes a die pad 20, a semiconductor element 30 which is loaded on the die pad 20, and a sealing resin 40. A plurality of electrically conductive portions 10 each having a layered structure including a metal foil 1 comprising copper or a copper alloy, and electrically conductive portion plating layers 2 provided at both upper and lower ends of the metal foil 1 are arranged around the die pad 20. The die pad 20 has a lower die pad plating layer 2b, and the semiconductor element 30 is loaded on the die pad 20 comprising such a die pad plating layer 2b. Electrodes 30a provided on the semiconductor element 30 are electrically connected with top ends of the electrically conductive portions 10 via wires 3, respectively. The lower electrically conductive portion plating layers 2 of the electrically conductive portions 10 and the die pad plating layer 2b of the die pad 20 are exposed outside from the sealing resin 40 on their back faces. |
