| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate of which the thickness of an Si active layer is accurate, and to provide its manufacturing method. SOLUTION: In the semiconductor substrate is formed of a first substrate 10, made of a semiconductor material and a second substrate 50 laminated to the first surface 10a of the first substrate 10, the first substrate 10 is provided with a recess 30a formed on the first surface 10a of the first substrate 10; a through-hole 20a, having openings in a first surface 10a of the first substrate 10 and in a second surface 10b as the reverse surface of the first surface 10a; an insulating section 30 embedded in the recess 30a; and an insulating section 20 embedded inside the through-hole 20a. The insulating section 20, embedded inside the through-hole 20a, includes a first layer 21 made of a first insulating material that is formed covering the side wall 20b of the through-hole 20a and the opening 20c of the second surface 10b and a second layer 22, made of a second material which is different from the first insulating material and is embedded inside the first layer 21. COPYRIGHT: (C)2009,JPO&INPIT
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