| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the shapes of gate electrodes of an N-channel insulating gate type field effect transistor and a P-channel insulating gate type field effect transistor, of which gate electrode structures are different. SOLUTION: In a semiconductor device 50, an N-channel MISFET and a P-channel FMISFET are prepared on a semiconductor substrate 1. On the semiconductor substrate 1, a gate insulating film 7, a gate electrode film 8, and an insulating film 10 are laminated overlappingly between the source and the drain of the N-channel MISFET. On the semiconductor substrate 1, a gate insulating film 7, a gate electrode film 9, and the insulating film 10 are laminated overlappingly between the source and the drain of the P-channel MISFET. The gate electrode film 9 is formed to be thinner than the gate electrode film 8 by a thickness of correction film during simultaneous processing of the gate electrode film. COPYRIGHT: (C)2009,JPO&INPIT
|
