| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a semiconductor element capable of applying compressive stress to a region of a semiconductor film where carriers move is free from the material or film thickness of an interlayer insulating film. SOLUTION: A cavity is formed between the semiconductor film uses as an active layer of a transistor, and a base substrate. A region of the semiconductor film which overlaps the cavity is deformed toward the base substrate. Then the transistor has a gate insulating film and an electrode, stacked in order, in the region of the semiconductor film overlapping the cavity. The transistor, therefore, has a channel formation region in the region where the semiconductor film is deformed. Further, the transistor may have a source or drain formed in the region where the semiconductor film is deformed in addition to the channel formation region. COPYRIGHT: (C)2009,JPO&INPIT
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