| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing the silicon carbide single crystal preventing a silicon carbide single crystal from cracking while keeping a growth space region in a uniformly heated state, in the growth of the silicon carbide single crystal. SOLUTION: The apparatus for producing the silicon carbide single crystal comprises a partitioning plate 23c in an opening end of a cylindrical part 23b in a closing part 23 composing a lid 20, so as to prevent sublimated gas from flowing into the space 23e between the inner wall of the side wall part 21 composing the lid 20 using the partitioning plate 23c and the cylindrical part 23b. COPYRIGHT: (C)2009,JPO&INPIT
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