发明名称 METHOD FOR FORMING VIAS IN A SUBSTRATE
摘要 The present invention relates to a method for forming vias in a substrate, comprising the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a photo resist layer on the first surface of the substrate; (c) forming a pattern on the photo resist layer; (d) forming a groove and a pillar in the substrate according to the pattern, wherein the groove surrounds the pillar; (e) forming a polymer in the groove of the substrate; (f) removing the pillar of the substrate to form an accommodating space; (g) forming a conductive metal in the accommodating space; and (h) removing part of the second surface of the substrate to expose the conductive metal and the polymer. As a result, thicker polymer can be formed in the groove, and the thickness of the polymer in the groove is uniform.
申请公布号 US2009035931(A1) 申请公布日期 2009.02.05
申请号 US20080183128 申请日期 2008.07.31
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 WANG MENG-JEN
分类号 H01L21/4763 主分类号 H01L21/4763
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