发明名称 Semiconductor device and method of manufacturing it
摘要 A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
申请公布号 US2009032908(A1) 申请公布日期 2009.02.05
申请号 US20070806884 申请日期 2007.06.05
申请人 SONY CORPORATION 发明人 MASUI YUJI;ARAKIDA TAKAHIRO;YAMAUCHI YOSHINORI;KIKUCHI KAYOKO;KODA RINTARO;YAMAGUCHI NORIHIKO
分类号 H01L29/06;H01L21/66 主分类号 H01L29/06
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