NON-VOLATILE MEMORY HAVING A DYNAMICALLY ADJUSTABLE SOFT PROGRAM VERIFY VOLTAGE LEVEL AND METHOD THEREFOR

摘要

An erase operation in a non-volatile memory (10) includes selecting a block (14, 16, or 18) on which to perform an erase operation, erasing the selected block? receiving test data corresponding to the selected block, determining a soft program verify voltage level based on the test data, and soft programming the erased selected block using the soft program verify voltage level. A non-volatile memory (10) includes a plurality of blocks, a test block (20) which stores test data corresponding to each of the plurality of blocks, and a flash control (30) coupled to the plurality of blocks and the test block, the flash control determining a soft program verify voltage level for a particular block of the plurality of blocks based on the test data for the particular block when the particular block is being soft programmed.