PHASE CHANGE MEMORY DEVICES AND METHODS OF FORMING THE SAME

摘要

A phase change memory device and a method of forming the same are provided to prevent the characteristic deterioration of the phase change material layer by filling the opening with the phase change material layer. The insulating layer(110) is arranged on the substrate(100). The insulating layer comprises the oxide film. The bottom electrode(120) can fill up the lower part of the opening(115). The bottom electrode is electrically connected to the substrate having the selection element. The phase change material pattern is arranged within the opening. The wetting pattern is interposed between the side wall of the opening and phase change material pattern(130a). The phase change material pattern contacts with the wetting pattern. The wetting pattern is extended and interposed between the phase change material pattern and the bottom electrode. The phase change material pattern and bottom electrode are electrically connected through the wetting pattern.