| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element of a silicon single crystal capable of selecting a wavelength to actually emit light from the emittable light of at least two wavelengths in the light emitting element, and its manufacturing method. <P>SOLUTION: The light emitting element 100 is formed of the silicon single crystal having a PIN structure. Two kinds of crystal defects 12a and 12b for emitting the light of the different wavelengths are formed for each divided range of an impurity low density layer 4, and an electrode pair clamping the n<SP>-</SP>type impurity low density layer 4 of the range through an n<SP>+</SP>type silicon layer 6 and a p<SP>-</SP>type silicon region 2 is formed for each range. The light is emitted from the crystal defect 12a when a voltage is applied to a surface electrode 18a, and the light is emitted from the crystal defect 12b when a voltage is applied to a surface electrode 18b. When the voltage is applied to both electrodes 18a and 18b simultaneously, the light of the two kinds of wavelengths can be simultaneously emitted. <P>COPYRIGHT: (C)2009,JPO&INPIT |
