| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a forming method of an alignment mark such that even when the size of the alignment mark is large, its abnormal oxidation can be prevented, and to provide the semiconductor device. <P>SOLUTION: A plug electrode across from a substrate 1 to a top surface of a third interlayer insulating layer 9 is divided into a first plug electrode 5 and a second plug electrode 13, which are connected to each other; and the first interlayer insulating film 3 is used as an etching stopper layer, and the alignment mark 15 is formed on the first interlayer insulating layer 3. An opening portion H can be formed shallowly, so it is easy to bury a W layer 11 in the opening portion H and step coverage of an oxidized barrier layer 17 covering the alignment mark 15 can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
