| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance efficiency by absorbing the light penetrating a multiple quantum well layer again by a third semiconductor layer, and to enhance energy efficiency by decreasing the number of layers in the multiple quantum well layer thereby suppressing recombination on the interface. <P>SOLUTION: The multiple quantum well layer 28 is constituted by laminating a plurality of barrier layers 33, and well layers 34 having a band gap smaller than that of the barrier layer 33 alternately. The third semiconductor layer having a band gap smaller than that of the barrier layer 33 and thicker than the well layer 34 is provided contiguously to the barrier layer 33 located at the end on the side opposite to the light receiving surface side. <P>COPYRIGHT: (C)2009,JPO&INPIT |
