| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, by which resistance of a contact plug is made lower than before. SOLUTION: The method of manufacturing the semiconductor device includes: a step (S102) of depositing an SiO<SB>2</SB>film on a semiconductor base; a step (S104) of forming a contact hole in the SiO<SB>2</SB>film; a step (S106) of depositing a Ti film in the contact hole; a step (S108) of nitriding the Ti film; a step (S110) of removing the TiN film deposited on a contact-hole sidewall; and a step (S114) of depositing a W film in the contact hole. COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2009026864(A) |
申请公布日期 |
2009.02.05 |
| 申请号 |
JP20070186959 |
申请日期 |
2007.07.18 |
| 申请人 |
TOSHIBA CORP |
发明人 |
HOSHI FUMIO;MATSUYAMA HIDETO |
| 分类号 |
H01L21/768;C23C16/08;H01L21/28;H01L21/285;H01L21/306 |
主分类号 |
H01L21/768 |
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