| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can improve operation speed sufficiently while suppressing the deterioration of heat dissipation properties and which hardly causes a leakage current, even when including a heatsink. SOLUTION: The semiconductor laser element is provided with an n-type clad layer 3, an MQW active layer 5 formed on the n-type clad layer 3, and a p-type clad layer 7, which is formed on the MQW active layer 5 and has a protrusion constituting a flat part and ridge portion part protruding from the flat part. In a part positioned in the vicinity of the protrusion of the p-type clad layer 7, only a first current block layer 9 is formed. On the flat part of a part positioned except the vicinity of the protrusion, a multilayer film constituted of the first current block layer 9 and a second current block layer 10 is formed. COPYRIGHT: (C)2009,JPO&INPIT
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