| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device of high image quality which has a high sensitivity and is capable of coping with finer pixels for increasing the number of pixels and of operating at a high speed, and a method for manufacturing the same. SOLUTION: The solid-state imaging device is provided with a plurality of photoelectric conversion portions 1 arranged in a matrix on a substrate, vertical transfer channels 2 arranged between vertical columns of the photoelectric conversion portions 1, a plurality of vertical transfer electrodes 11 for transferring charges of the photoelectric conversion portions 1 to the vertical transfer channels 2, a light-shielding film 13 that is laminated on the vertical transfer electrodes 11 via a first insulating film and has a plurality of window portions defining light-receiving portions of the photoelectric conversion portions 1, and shunt wiring 14 that is arranged in regions overlapping the vertical transfer channels and is insulated from the light-shielding film 13 by a second insulating film. A driving pulse according to a drive phase of each of the vertical transfer electrodes 11 is supplied from the shunt wiring 14. COPYRIGHT: (C)2009,JPO&INPIT
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