| 摘要 |
PROBLEM TO BE SOLVED: To provide a device of manufacturing a thin film semiconductor capable of irradiating the laser beam of uniform intensity distribution regardless of the transmittance variation of a laser beam introduction window, and a method of manufacturing the thin film semiconductor. SOLUTION: The device performs the annealing treatment of the thin film semiconductor by irradiating the thin film semiconductor formed on the surface of a substrate with a laser beam 50. The device comprises an annealing treatment chamber in which the substrate is installed, the laser beam introduction window provided in the annealing treatment chamber, a laser light source arranged outside the annealing treatment chamber, a slit 10 arranged in the optical path of the laser beam 50 for shielding a part of the laser beam 50, and a condenser lens 42 arranged in the optical path for condensing the laser beam 50 at least in a short axis direction. The laser beam 50 is partially shielded by the slit 10 and condensed roughly linearly by the condensing lens 42, and as a result, the intensity distribution in a long axis direction is adjusted. COPYRIGHT: (C)2009,JPO&INPIT
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