发明名称 |
Photoresist and pattern-forming process using the same |
摘要 |
A photolithography process using a photoresist is as following. A substrate is provided for coating a photoresist thereon to form a photoresist layer and the photoresist is formed by mixing photocatalyst particles and polymer binder in a solvent. The photoresist layer is well-adhesive and has good mechanical strength. A light is illuminated on the photoresist layer through a photo mask having a pre-designed pattern thereon. Then, the portion of the photoresist layer where the light projects is removed by water or another environment-friendly solvent so as to reduce the harmful waste produced in the processes.
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申请公布号 |
US2009035701(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070905996 |
申请日期 |
2007.10.09 |
申请人 |
LIAU CHAU-KUANG;CHOU WEN-WEI;WU JUNG-KANG |
发明人 |
LIAU CHAU-KUANG;CHOU WEN-WEI;WU JUNG-KANG |
分类号 |
G03C1/77;G03F7/20 |
主分类号 |
G03C1/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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