发明名称 Photoresist and pattern-forming process using the same
摘要 A photolithography process using a photoresist is as following. A substrate is provided for coating a photoresist thereon to form a photoresist layer and the photoresist is formed by mixing photocatalyst particles and polymer binder in a solvent. The photoresist layer is well-adhesive and has good mechanical strength. A light is illuminated on the photoresist layer through a photo mask having a pre-designed pattern thereon. Then, the portion of the photoresist layer where the light projects is removed by water or another environment-friendly solvent so as to reduce the harmful waste produced in the processes.
申请公布号 US2009035701(A1) 申请公布日期 2009.02.05
申请号 US20070905996 申请日期 2007.10.09
申请人 LIAU CHAU-KUANG;CHOU WEN-WEI;WU JUNG-KANG 发明人 LIAU CHAU-KUANG;CHOU WEN-WEI;WU JUNG-KANG
分类号 G03C1/77;G03F7/20 主分类号 G03C1/77
代理机构 代理人
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