发明名称 Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure
摘要 A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.
申请公布号 US2009035948(A1) 申请公布日期 2009.02.05
申请号 US20060990519 申请日期 2006.08.23
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MIYATA TOSHIMITSU;HAYASHIDA AKIRA;SHIMADA MASAKAZU;KITAMURA KIMIO;TANAKA KENJI
分类号 H01L21/31;A21B1/00 主分类号 H01L21/31
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