发明名称 Methods and Systems to Compensate for a Stitching Disturbance of a Printed Pattern in a Maskless Lithography System Not Utilizing Overlap of the Exposure Zones
摘要 A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.
申请公布号 US2009033893(A1) 申请公布日期 2009.02.05
申请号 US20080178522 申请日期 2008.07.23
申请人 ASML HOLDING N.V. 发明人 BLEEKER ARNO;CEBUHAR WINCESLAO A.;LATYPOV AZAT
分类号 G03B27/42;G02F1/1335;G03B27/68;G03F7/20;H01L21/027 主分类号 G03B27/42
代理机构 代理人
主权项
地址