| 摘要 |
A plasma-etching apparatus for precisely controlling the etch rate are provided to arbitrarily control the etch rate of upper side and lower side of substrate by controlling the plasma density. The plasma-etching apparatus comprises the chamber(10) having the reaction space; the substrate support portion(20) for mounting the substrate(W); the shielding part(30) for preventing the generation of the plasma; the electrode portion(40) which surrounds the edge region of the substrate and applies the power source for the plasma formation; the elevating unit(50) raising the electrode portion; the gas supply pipeline(19) supplying the reaction gas to the edge region of the substrate; the chamber body(10a); the chamber lid(10b).
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