| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency power amplification module which can reduce the leakage of a high-frequency signal from a bias line, and can be inexpensively manufactured. SOLUTION: A side wall is formed which covers a bias line supplying bias power to a high-frequency transistor and has penetration holes for making the bias line having a maximum diameter not more than a half of the wavelength of a high-frequency signal penetrate therethrough. When the penetration holes are formed at the side wall, the side wall acts as a waveguide. The waveguide does not transmit the high-frequency signal having a frequency not higher than a half of the width of the waveguide. Therefore, the maximum diameter of the penetration holes 106, 107 are not larger than a half of the wavelength of the high-frequency signal transmitted on a micro strip line 104 to prevent the high-frequency signal from leaking through the side wall 105. COPYRIGHT: (C)2009,JPO&INPIT
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