| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide type nitride semiconductor laser element having a ridge stripe offering a fine yield, and to provide a method for manufacturing the nitride semiconductor laser element. SOLUTION: The nitride semiconductor laser element having the ridge stripe includes a thick metal layer of 500 nm or more in thickness formed on the top face of the ridge stripe. The method for manufacturing the nitride semiconductor laser element includes a step of forming a nitride semiconductor layer laminated structure by laminating nitride semiconductor layers on a substrate in order, a step of forming the thick metal layer of 500 nm or more in thickness on part of the top face of the nitride semiconductor layer laminated structure, and a step of forming the ridge stripe on part of the top face of the nitride semiconductor layer laminated structure by eliminating at least part of the nitride semiconductor layer laminated structure after the formation of the thick metal layer, using the thick metal layer as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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