| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element, having a structure capable of optimizing the film thickness of an antireflection film formed on a photodiode, without causing deterioration of image sensor characteristics or being restricted on a manufacturing process, even if a general CMOS manufacturing process is applied. SOLUTION: This solid-state imaging device is equipped with a photodiode 11, formed in the upper part of a silicon substrate 10 to perform optical conversion, a silicon oxide film 17 formed on the silicon substrate 10 so as to cover the photodiode 11, and a silicon nitride film 18 formed on the silicon oxide film 17. The silicon nitride film 18 has a film thickness part that is smaller than the film thickness of at least the end part of the silicon nitride film 18, on all or a part of the photodiode 11. COPYRIGHT: (C)2009,JPO&INPIT
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