IN SITU DEPOSITION OF DIFFERENT METAL-CONTAINING FILMS USING CYCLOPENTADIENYL METAL PRECURSORS

摘要

A method is disclosed depositing multiple layers of different materials in a sequential process within a deposition chamber. A substrate is provided in a deposition chamber. A plurality of cycles of a first atomic layer deposition (ALD) process is sequentially conducted to deposit a layer of a first material on the substrate in the deposition chamber. These first cycles include pulsing a cyclopentadienyl metal precursor. A plurality of cycles of a second ALD process is sequentially conducted to deposit a layer of a second material on the layer of the first material in the deposition chamber. The second material comprises a metal different from the metal in the cyclopentadienyl metal precursor.