摘要 |
A CMP apparatus is provided with a polishing pad, a film thickness sensor for measuring a thickness of a film being polished on a wafer via the polishing pad, a polishing pad thickness measuring unit for measuring the thickness of the polishing pad, a dresser for dressing the polishing pad, and a polishing control unit for switching polishing conditions in response to a fact that an output value from the film thickness sensor has exceeded a threshold value. The polishing control unit has a memory unit for storing a threshold value corresponding to the thickness of the polishing pad after dressing when the polishing pad is dressed.
|