发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME |
摘要 |
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a second gate line formed in the pattern of spacer on the second sidewall of the fin. First and second impurity regions are disposed in the fin. The first and second impurity regions are isolated from each other and define a channel region in the fin between the first and second gate lines.
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申请公布号 |
US2009035903(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080194343 |
申请日期 |
2008.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;SONG KI-WHAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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