| 摘要 |
<p>A manufacturing method of phase change memory device is provided to reduce the number of photolithography process by forming a top electrode and a bottom electrode through damascene process at the same time. A manufacturing method of phase change memory device comprises the following steps: a step for successively depositing a first insulating film and phase change material on a substrate; a step for patterning the phase change material through photolithography and etching process; a step for depositing a second insulating film on the first insulating film; a step for forming a via on the second insulating film; a step for successively forming a barrier metal and a metal on the via; and a step for forming an electrode and a heating electrode through chemical mechanical polishing at the same time.</p> |
