| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having high COD level and high light emission efficiency, by preventing impurities from being accumulated in an active layer, when a window structure is formed by impurity diffusion near an end surface of a laser resonator. SOLUTION: In the semiconductor laser having high COD level and high light emission efficiency; a clad layer 4, adjoining a substrate side of an active layer 5 is doped with diffusion impurities Zn so that the diffusion coefficient of the diffusion impurities becomes large in a portion doped with the diffusion impurities, thereby the impurities are prevented from accumulation in the active layer 5 of the impurities are restrained. COPYRIGHT: (C)2009,JPO&INPIT
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