METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent disconnection of a metal silicide layer formed by the salicide technology. SOLUTION: A gate insulator 4, a gate electrode 5 and an n+-type semiconductor region 8 for a source-drain are formed on a semiconductor substrate 1. Then, a metal silicide layer 13 is formed on the gate electrode 5 and the n+-type semiconductor region 8 by the salicide technology. An insulating film 21 is formed on the semiconductor substrate 1 and is subjected to heat treatment to reduce junction leak prior to formation of insulating films 22, 23. The insulating films 21, 22 are films to generate a tensional force in the semiconductor substrate 1. Thereafter, a contact hole 24 is formed in the insulating film 21, 22, 23. In this case, the insulating film 23 is dry-etched using the insulating films 22, 21 as etching stoppers, and then, the insulating films 22, 21 are dry-etched at the bottom of the contact hole 24. COPYRIGHT: (C)2009,JPO&INPIT