| 摘要 |
PROBLEM TO BE SOLVED: To provide a detector comprising an array of light-receiving elements, in which a versatile CMOS circuit can be used as it is without sacrificing light-receiving sensitivity and dark current. SOLUTION: A near-infrared light detector 70 is a combination of an array of compound semiconductor light-receiving elements 10 and a CMOS circuit 71. In the detector, multiple planar light-receiving elements 10 are formed on a single compound semiconductor substrate 51 so as to constitute the array of light-receiving elements. An n-type portion 16 is separately formed for each light-receiving element, and the n-type portion of each light receiving element is electrically connected to a pixel signal input portion of the CMOS circuit. COPYRIGHT: (C)2009,JPO&INPIT
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