发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING SAME |
摘要 |
A semiconductor structure and method of manufacturing the semiconductor structure, and more particularly to a semiconductor structure having reduced metal line resistance and a method of manufacturing the same in back end of line (BEOL) processes. The method includes forming a first trench extending to a lower metal layer Mx+1 and forming a second trench remote from the first trench. The method further includes filling the first trench and the second trench with conductive material. The conductive material in the second trench forms a vertical wiring line extending orthogonally and in electrical contact with an upper wiring layer and electrically isolated from lower metal layers including the lower metal layer Mx+1. The vertical wiring line decreases a resistance of a structure.
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申请公布号 |
US2009035588(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070831005 |
申请日期 |
2007.07.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI WAI-KIN;LIN YI-HSIUNG;MATUSIEWICZ GERALD |
分类号 |
B32B15/04;H01L21/44 |
主分类号 |
B32B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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