发明名称 |
METHODS FOR DEVICE FABRICATION USING PITCH REDUCTION AND ASSOCIATED STRUCTURES |
摘要 |
Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided. |
申请公布号 |
US2009035584(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070830449 |
申请日期 |
2007.07.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TRAN LUAN C.;GIRIDHAR RAGHUPATHY |
分类号 |
G03F7/20;B32B5/00 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|