| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of fabricating a fined semiconductor mask. <P>SOLUTION: First, a semiconductor stack is provided that has a sacrificial mask comprised of a series of lines (step 202). Then, a spacer mask is formed that has spacer lines adjacent to the sidewalls of the series of lines of the sacrificial mask (step 204). The spacer mask also has interposed lines between the spacer lines. Finally, the sacrificial mask is removed to provide only the spacer mask. The spacer mask having interposed lines triples the frequency of the series of lines of the sacrificial mask. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
