发明名称 |
METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME |
摘要 |
A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
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申请公布号 |
US2009035877(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080183657 |
申请日期 |
2008.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
IM DONG-HYUN;KIM IK-SOO;LEE CHOONG-MAN;HEO JANG-EUN;LEE SUNG-JU |
分类号 |
H01L21/02;C23C16/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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