发明名称 |
Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same |
摘要 |
Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
|
申请公布号 |
US2009035516(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080219983 |
申请日期 |
2008.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO YOUN-JOUNG;LEE JUNG-HO;CHO JUN-HYUN;RYU SEUNG-MIN;CHO KYOO-CHUL;CHOI JUNG-SIK |
分类号 |
B32B3/24;B05D3/00;B05D3/02;B05D5/12;C01B35/14;C23C16/00;C23C16/455 |
主分类号 |
B32B3/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|