| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a favorable image without image unevenness can be obtained. <P>SOLUTION: A first semiconductor layer includes a first contact area for electrically connecting one of the source and drain of a first N-channel type TFT to a first wiring line, a second contact area for electrically connecting the other of the source and drain of the first N-channel TFT and the other of the source and drain of a second N-channel TFT to a second wiring line, and a third contact area for electrically connecting the one of the source and drain of the second N-channel TFT to the first wiring line. The width in the channel width direction of the first semiconductor layer in an area where the first semiconductor layer overlaps the gate electrode of the first (second) N-channel type TFT is smaller than the width in the channel width direction of the first semiconductor layer in the first to third contact areas. <P>COPYRIGHT: (C)2009,JPO&INPIT |
