| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which grooves are formed on a surface of a resist film to prevent heat shrinkage of a resist pattern due to a baking treatment. <P>SOLUTION: The manufacturing method of the semiconductor device includes a process of forming a resist layer 102 on a substrate 101, a process of forming a predetermined exposed region on the resist layer 102, a process of forming an exposed region for groove formation on the resist layer 102, a developing process of bringing a developer into contact with the resist layer 102 to form the resist pattern 112 having an opening portion and also to form the grooves 113 on a surface layer of the resist pattern 112, and a process of subjecting the resist pattern 112 to the baking treatment. <P>COPYRIGHT: (C)2009,JPO&INPIT |
