| 发明名称 |
NONVOLATILE MEMORIES WITH CHARGE TRAPPING LAYERS CONTAINING SILICON NITRIDE WITH GERMANIUM OR PHOSPHORUS |
| 摘要 |
A nonvolatile memory has a charge trapping layer which includes a layer (130) made of silicon nitride doped with germanium or phosphorus (210). The germanium or phosphorus contains a large percentage of scattered, non-crystallized atoms uniformly distributed in the silicon nitride layer to increase the charge trapping density.
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| 申请公布号 |
US2009032861(A1) |
申请公布日期 |
2009.02.05 |
| 申请号 |
US20070830524 |
申请日期 |
2007.07.30 |
| 申请人 |
DONG ZHONG;CHEN CHILIANG;CHEN CHING-HWA |
发明人 |
DONG ZHONG;CHEN CHILIANG;CHEN CHING-HWA |
| 分类号 |
H01L29/792;H01L21/3205 |
主分类号 |
H01L29/792 |
| 代理机构 |
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