METHOD FOR MANUFACTURING A NON-VOLATILE SEMICONDUCTOR DEVICE

摘要

A method of manufacturing the non-volatile memory device is provided to improve the reliability of the non-volatile memory device by removing the deformity of the tunnel oxide file pattern. Gate structures(112,114) including the tunnel oxide file pattern(102a), the charge trapping layer pattern(104a), and the dielectric layer pattern(106a) and the electrode pattern are formed on the substrate. The silicon nitride film is formed in the rear side of substrate and covers the gate structure. The interlayer insulating film is formed on the silicon nitride film located on the substrate surface. Thin films remaining in the rear side of substrate are eliminated to expose the rear side of substrate. The deformity of the tunnel oxide file pattern is removed by supplying the annealing gas through the top and bottom surface of substrate.