| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sulfide system compound semiconductor, having less fluctuations for conversion efficiency, and to provide a photoelectric element that uses the same compound semiconductor as a light-absorbing layer. <P>SOLUTION: The photoelectric element includes a sulfide system compound semiconductor that contains Cu, Zn, Sn, and S and that does not contain a substance having Na and O and that uses this sulfide system compound semiconductor as a light-absorbing layer. In the photoelectric element that has the light-absorbing layer formed of the sulfide system compound semiconductor containing Cu, Zn, Sn, and S, members other than the light-absorbing layer forming the photoelectric element is formed of a material that does not contain Na. In the photoelectric element that is constituted of the light-absorbing layer formed of the sulfide system compound semiconductor that contains Cu, Zn, Sn, and S, at least one member, other than the light-absorbing layer forming the photoelectric element is formed of the material that contains Na and a diffusion-blocking layer for blocking the diffusion of Na to the light-absorbing layer from the material that contains Na is additionally provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
