| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw powder for an ion plating evaporation source material which can deposit a dense gas barrier film having high productivity, high adhesion and high gas barrier properties, to provide an evaporation source material suitable for an ion plating process, to provide a method for producing the evaporation source material, to provide a gas barrier sheet, and to provide a method for producing the gas barrier sheet. SOLUTION: The raw powder contains: a silicon oxide with the average grain diameter of≤5μm; and a high refraction index material having the average grain diameter of≤5μm and a refraction index of≥1.8, and in which the content of the high refraction index material is 5 to 50 pts.wt. to 100 pts.wt. of the silicon oxide. In this raw material powder, the specific surface area of the silicon oxide is preferably≥600 m<SP>2</SP>/g. The evaporation source material for ion plating is obtained by sintering or granulating the above raw material, so as to be worked into lumpy grains with the average grain diameter of≥2 mm or into lumpy matter. COPYRIGHT: (C)2009,JPO&INPIT
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