发明名称 |
SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE |
摘要 |
In one aspect, a method is provided. The method comprises forming a meniscus at an interface between a substrate and a fluid surface by moving the substrate through the fluid; shortening the meniscus by applying an air knife to the meniscus at the interface between the substrate and the fluid surface; and Marangoni drying the substrate by applying a drying vapor to the shortened meniscus. Numerous other aspects are provided.
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申请公布号 |
US2009032068(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20080249961 |
申请日期 |
2008.10.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
STEIN NATHAN D.;ACHKIRE YOUNES;FRANKLIN TIMOTHY J.;SVIRCHEVSKI JULIA;MAROHL DAN A. |
分类号 |
B08B5/00;B08B3/04;H01L21/00 |
主分类号 |
B08B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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